The origin of the red emission in n-zno nanotubes/p-gan white light emitting diodes

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Alvi, N H ^a   ul Hasan, Kamran ^a   Nur, Omer ^a   Willander, Magnus ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; NANOTUBES; NITROGEN; ZINC OXIDE; ARGON; LIGHT EMISSION; OXYGEN; OXYGEN VACANCIES;

AQUEOUS CHEMICAL GROWTH; COLOR RENDERING PROPERTIES; DEEP LEVEL EMISSION; DEEP-LEVEL DEFECTS; ELECTROLUMINESCENCE SPECTRUM; NITROGEN ANNEALING; OXYGEN INTERSTITIALS; WHITE LIGHT EMITTING DIODES; AMBIENTS; AS-GROWN; INTERSTITIALS; NITROGEN AMBIENT; RED EMISSIONS; ZNO; ZNO NANOTUBE;

OXYGEN VACANCIES; LIGHT EMITTING DIODES;

EID: 84255214123     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-130     Document Type: Article

References (32)

1. Gong Y, Andelman T, Neumark G, O'Brien S, Kuskovsky I: Origin of defect- related green emission from ZnO nanoparticles: effect of surface modification. Nanoscale Res Lett 2007, 2:297-302.
2. Bian J, Liu W, Liang H, Hu L, Sun J, Luo Y, Du G: Room temperature electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ultrasonic spray pyrolysis. Chem Phys Lett 2006, 430:183-187.
3. Alivov YI, Look DC, Ataev BM, Chukichev MV, Mamedov VV, Zinenko VI, Agafonov YA, Pustovit AN: Fabrication of ZnO-based metal-insulator- semiconductor diodes by ion implantation. Solid-State Electron 2004, 48:2343-2346.
4. Look DC: Recent advances in ZnO materials and devices. Mater Sci Eng B 2001,80:383-387.
5. Yang LL, Zhao QX, Willander M, Yang JH, Ivanov I: Annealing effects on optical properties of low temperature grown ZnO nanorod arrays. J Appl Phys 2009, 105:053503-053507.
6. Willander M, Nur O, Zhao QX, Yang LL, Lorenz M, Cao BQ, Zúñiga Pérez J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al- Suleiman M, El-Shaer A, Che Mofor A, Postels B, Waag A, Boukos N, Travlos A, Kwack HS, Guinard J, Le Si Dang D: Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers. Nanotechnology 2009, 20:332001.
7. Wang ZL: Nanostructures of zinc oxide. Mater Today 2004, 7:26-33.
8. Klingshirn C: ZnO: From basics towards applications. Phys Status Solidi (b) 2007,244:3027-3073.
9. Djurisic AB, Leung YH, Tam KH, Hsu YF, Ding L, Ge WK, Zhong YC, Wong KS, Chan WK, Tam HL, Cheah KW, Kwok WM, Phillips D: Defect emissions in ZnO nanostructures. Nanotechnology 2007, 18:095702.
10. Tam KH, Cheung CK, Leung YH, Djuriåjiä AB, Ling CC, Beling CD, Fung S, Kwok WM, Chan WK, Phillips DL, Ding L, Ge WK: Defects in ZnO nanorods prepared by a hydrothermal method. J Phys Chem B 2006, 110:20865-20871.
11. Jeong SH, Kim BS, Lee BT: Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient. Appl Phys Lett 2003, 82:2625-2627.
12. Shan FK, Liu GX, Lee WJ, Shin BC: The role of oxygen vacancies in epitaxial-deposited ZnO thin films. J Appl Phys 2007, 101:053106-053108.
13. Djurisic AB, Leung YH, Tam KH, Ding L, Ge WK, Chen HY, Gwo S: Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength. Appl Phys Lett 2006, 88:103107-103103.
14. Carcia PF, McLean RS, Reilly MH, Nunes JG: Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl Phys Lett 2003, 82:1117-1119.
15. Zhao QX, Klason P, Willander M, Zhong HM, Lu W, Yang JH: Deep-level emissions influenced by O and Zn implantations in ZnO. Appl Phys Lett 2005,87:211912-211913.
16. Yamauchi S, Goto Y, Hariu T: Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy. J Cryst Growth 2004, 260:1-6.
17. Cao B, Cai W, Zeng H: Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays. Appl Phys Lett 2006, 88:161101-161103.
18. Zeng H, Li Z, Cai W, Liu P: Strong localization effect in temperature dependence of violet-blue emission from ZnO nanoshells. J Appl Phys 2007,102:104307-104304.
19. Wei XQ, Man BY, Liu M, Xue CS, Zhuang HZ, Yang C: Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2. Physica B 2007, 388:145-152.
20. Lin B, Fu Z, Jia Y: Green luminescent center in undoped zinc oxide films deposited on silicon substrates. Appl Phys Lett 2001, 79:943-945.
21. Quang LH, Chua SJ, Ping Loh K, Fitzgerald E: The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis. J Cryst Growth 2006, 287:157-161.
22. Ahn CH, Kim YY, Kim DC, Mohanta SK, Cho HK: A comparative analysis of deep level emission in ZnO layers deposited by various methods. J Appl Phys 2009, 105:089902-089901.
23. Lai E, Kim W, Yang P: Vertical nanowire array-based light emitting diodes. Nano Res 2008, 1:123-128.
24. Yuen C, Yu SF, Lau SP, Rusli, Chen TP: Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Appl Phys Lett 2005, 86:241111-241113.
25. Young Joon H, Jong-Myeong J, Miyoung K, Seong-Ran J, Kyung Ho P, Gyu- Chul Y: Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications. New Journal of Physics 2009, 11:125021.
26. Sadaf J, Israr M, Kishwar S, Nur O, Willander M: White electroluminescence using ZnO nanotubes/GaN heterostructure light-emitting diode. Nanoscale Res Lett 2010, 5:957-960.
27. Leung YH, Djurisic AB, Liu ZT, Li D, Xie MH, Chan WK: Defect photoluminescence of ZnO nanorods synthesized by chemical methods. J Phys Chem Solids 2008, 69:353-357.
28. Kim HK, Kim KK, Park SJ, Seong TY, Adesida I: Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer. J Appl Phys 2003, 94:4225-4227.
29. Vayssieres L, Keis K, Lindquist SE, Hagfeldt A: Purpose-built anisotropic metal oxide material: 3D highly oriented microrod array of ZnO. J Phys Chem B 2001, 105:3350-3352.
30. Alvi NH, Willander M, Nur O: The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes. Superlattices and Microstructures 2010, 47:754-761.
31. Greene LE, Law M, Tan DH, Montano M, Goldberger J, Somorjai G, Yang P: General route to vertical ZnO nanowire arrays using textured ZnO seeds. Nano Lett 2005, 5:1231-1236.
32. Jang JS, Chang IS, Kim HK, Seong TY, Lee S, Park SJ: Low-resistance Pt/Ni/ Au ohmic contacts to p-type GaN. Appl Phys Lett 1999, 74:70-72.