Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm

ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Volumn , Issue , 2013, Pages 105-108

  Najmzadeh, Mohammad ^a   Sallese, Jean Michel ^a   Berthome, Matthieu ^a   Grabinski, Wladek ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

Accumulation; Corner effect; Junctionless; Mobility extraction; Multi gate; Si nanowire; TCAD simulation

Indexed keywords

ACCUMULATION; CORNER EFFECTS; JUNCTIONLESS; MOBILITY EXTRACTION; MULTI-GATES; SI NANOWIRE; TCAD SIMULATION;

ELECTRIC RESISTANCE; EXTRACTION; NANOWIRES; SILICON; SILICON OXIDES;

MOSFET DEVICES;

EID: 84880302053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2013.6523512     Document Type: Conference Paper

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