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Volumn 28, Issue 13, 2013, Pages 1669-1679

Lowerature processing and control of structure and properties of TiO 2/c-sapphire epitaxial heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY SHARP INTERFACE; CONTROL OF STRUCTURE; DEPOSITION TEMPERATURES; EPITAXIAL HETEROSTRUCTURES; EPITAXIAL RELATIONSHIPS; GROWTH CHARACTERISTIC; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SUBSTRATE TEMPERATURE;

EID: 84880230580     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2013.42     Document Type: Article
Times cited : (10)

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