Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

Surface Science

Volumn 601, Issue 23, 2007, Pages 5649-5658

  Sbai N ^a   Perriere J ^a   Seiler, W ^b   Millon, E ^c  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b CNRS   (France)

^c UNIVERSITÉ D'ORLÉANS   (France)

Author keywords

Epitaxy; Pulsed laser deposition; Sapphire; Titanium oxide; X ray diffraction

Indexed keywords

CRYSTALLITES; EPITAXIAL GROWTH; OXYGEN; PULSED LASER DEPOSITION; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION;

IN-PLANE EPITAXIAL RELATIONSHIPS; OXYGEN PRESSURE; SAPPHIRE SUBSTRATES;

TITANIUM OXIDES;

EID: 36248976075     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.09.019     Document Type: Review

References (25)

1. Kim H., Kushto G.P., Arnold C.B., Kafafi Z.H., and Piqué A. Appl. Phys. Lett. 85 (2004) 464
2. Taurino A.M., Epifani M., Toccoli T., Iannotta S., and Siciliano P. Thin Solid Films 436 (2003) 52
3. Guo B., Liu Z., Hong L., and Jiang H. Surf. Coat. Technol. 198 (2005) 24
4. Song P.K., Trie Y., and Shigesato Y. Thin Solid Films 496 (2006) 121
5. Kitazawa S., Choi Y., Yamamoto S., and Yamaki T. Thin Solid Films 515 (2006) 1901
6. Kim D.H., Yang J.S., Lee K.W., Bu S.D., Kim D.-W., Noh T.W., Oh S.-J., Kim Y.-W., Chung J.S., Tanaka H., Lee H.Y., Kawai T., Won J.Y., Park S.H., and Lee J.C. J. Appl. Phys. 93 (2003) 6125
7. Matsumoto Y., Murakami M., Shono T., Fukumura T., Kawasaki M., Ahmet P., Chikyow T., Kohsihara S., and Koinuma H. Science 291 (2001) 854
8. Wang Z., Wang W., Tang J., Tung L.D., Spinu L., and Zhou W. Appl. Phys. Lett. 83 (2003) 518
9. Furubayashi Y., Hitosugi T., Yamamoto Y., Imata K., Kinoda G., Hirose Y., Shimada T., and Hasegawa T. Appl. Phys. Lett. 86 (2005) 252101
10. In: Chrisey D.B., and Huber G.K. (Eds). Pulsed Laser Deposition of Thin Films (1994), John Wiley, New York
11. Fukushima K., Takaoka G.H., and Yamada I. Jpn. J. Appl. Phys. 32 (1993) 3561
12. Morcrette M., Gutierrez-Llorente A., Laurent A., Perrière J., Barboux P., Boilot J.P., Raymond O., and Brousse T. Appl. Phys. A 67 (1998) 425
13. Morcrette M., Gutierrez-Llorente A., Seiler W., Perrière J., Laurent A., and Barboux P. J. Appl. Phys. 88 (1999) 5100
14. Chang H.L.M., Zhang T.J., Zhang H., Guo J., Kim H.K., and Lam D.J. J. Mater. Res. 8 (1993) 2634
15. Guo J., Chang H.L.M., and Lam D.J. Appl. Phys. 61 (1992) 3116
16. Doolittle L.R. Nucl. Instrum. Meth. B9 (1985) 344
17. Perez-Casero R., Perrière J., Gutierrez-Llorente A., Defourneau D., Millon E., Seiler W., and Soriano L. Phys. Rev. B 75 (2007) 165317
18. Roy R., and White W.B. J. Cryst. Growth 13/14 (1972) 78
19. Metev S., and Meteva K. Appl. Surf. Sci. 43 (1989) 402
20. Wang X.G., Smith J.R., and Scheffler M. Phys. Rev. B 66 (2002) 073411
21. Narayan J., Dovidenko K., Sharma A.K., and Oktyabarsky S. J. Appl. Phys. 84 (1998) 2597
22. Willmott P.R., Timm R., and Huber J.R. Appl. Surf. Sci. 127-129 (1998) 105
23. Chang H.L.M., You H., Gao Y., Guo J., Foster C.M., Chiarello R.P., and Zhang T.J. J. Mater. Res. 7 (1992) 2495
24. Becker T., Birkner A., Witte G., and Wöll Ch. Phys. Rev. B 65 (2002) 115401
25. Yao N., Wang Z.L., and Cowley J.M. Surf. Sci. 208 (1989) 533