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Volumn 102, Issue 25, 2013, Pages

Two opposite hysteresis curves in semiconductors with mobile dopants

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVE; DOPANT DISTRIBUTION; ELECTRONIC ENERGIES; FUNDAMENTAL FEATURES; METAL SEMICONDUCTOR INTERFACE; REVERSE BEHAVIOR; ROTATING DIRECTION; SPATIAL IN-HOMOGENEITY;

EID: 84879874462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811556     Document Type: Article
Times cited : (21)

References (21)
  • 1
    • 35748974883 scopus 로고    scopus 로고
    • 10.1038/nmat2023
    • R. Waser and M. Aono, Nature Mater. 6, 833-840 (2007). 10.1038/nmat2023
    • (2007) Nature Mater. , vol.6 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 5
    • 80052075159 scopus 로고    scopus 로고
    • 10.1038/476403a
    • D. B. Strukov, Nature 476, 403 (2011). 10.1038/476403a
    • (2011) Nature , vol.476 , pp. 403
    • Strukov, D.B.1
  • 17
    • 0001537507 scopus 로고
    • 10.1016/0022-3697(62)90165-8
    • R. Straton, J. Phys. Chem. Solids 23, 1177-1190 (1962). 10.1016/0022-3697(62)90165-8
    • (1962) J. Phys. Chem. Solids , vol.23 , pp. 1177-1190
    • Straton, R.1
  • 21
    • 84879847800 scopus 로고    scopus 로고
    • See supplementary material at http://dx.doi.org/10.1063/1.4811556 E-APPLAB-102-059325 for the calculation of the Schottky barrier for a silicon semiconductor with various dopping concentrations using the self-consistent relaxation method.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.