Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 282-287

  Dhar, Subhabrata ^a,b   Balakrishnan, V R ^a   Kumar, Vikram ^a   Ghosh, Subhasis ^a  

^a JAWAHARLAL NEHRU UNIVERSITY   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES;

IDEALITY FACTOR;

ELECTRIC CONTACTS;

EID: 0033886912     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822268     Document Type: Article

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