Fabrication and characterization of 2.3eV InGaN photovoltaic devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Misra, P ^a   Boney, C ^a,b   Medelci, N ^a,b   Starikov, D ^a,b   Freundlich, A ^c   Bensaoula, A ^c  

^a Integrated Micro Sensors Inc   (United States)

^b University of Houston   (United States)

^c UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATED DEVICE; FABRICATION AND CHARACTERIZATIONS; FLUX MODULATION; HIGH INDIUM CONTENTS; PHOTOVOLTAIC DEVICES; SHUNT AND SERIES RESISTANCE; SPECTRAL CONDITIONS; SPECTRAL RESPONSE;

ELECTRIC RESISTANCE; INDIUM; MOLECULAR BEAM EPITAXY; SOLAR CELLS; X RAY DIFFRACTION;

FABRICATION;

EID: 84879707330     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922693     Document Type: Conference Paper

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