Indium incorporation and droplet formation during InGaN molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 297-300

  Bord, O V ^a   Talalaev, R A ^b   Karpov, S Yu ^b   Makarov, Yu N ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DROP FORMATION; ELASTICITY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTOR GROWTH;

PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033221833     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<297::AID-PSSA297>3.0.CO;2-Z     Document Type: Article

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