An analytical hole mobility model for biaxial strained-Si-p-MOSFET

Journal of Computational and Theoretical Nanoscience

Volumn 10, Issue 5, 2013, Pages 1085-1090

  Chaudhry, Amit ^a   Sangwan, Sonu ^b  

^a PANJAB UNIVERSITY   (India)

^b RF Silicon   (India)

Author keywords

Biaxial Strain; Electric Field; Holes; Modeling; Scattering

Indexed keywords

BASIC THEORY; BIAXIAL STRAINS; HOLES; METAL OXIDE SEMICONDUCTOR; MOBILITY MODEL; SEMI-ANALYTICAL MODEL; STRAINED-SI; SURFACE ROUGHNESS SCATTERING;

COPYRIGHTS; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE SCATTERING; MODELS; MOS DEVICES; MOSFET DEVICES; SCATTERING; SILICON; SURFACE ROUGHNESS;

HOLE MOBILITY;

EID: 84879619797     PISSN: 15461955     EISSN: 15461963     Source Type: Journal    
DOI: 10.1166/jctn.2013.2810     Document Type: Article

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