A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 224-227

  Pham, A T ^a   Jungemann, C ^b   Nguyen, C D ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Biaxially strained Si; Linear response Monte Carlo method; PMOSFETs; Surface scattering; Warped structure of valence bands

Indexed keywords

MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES; MONTE CARLO METHODS; MOSFET DEVICES; PARAMETER ESTIMATION; QUANTUM THEORY; SCATTERING; SUBSTRATES;

IMPROVED MODIFIED LOCAL DENSITY APPROXIMATION (IMLDA); LINEAR RESPONSE (LR); SURFACE SCATTERING; VALENCE BANDS;

SILICON COMPOUNDS;

EID: 33751205360     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.010     Document Type: Article

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