Impact of al passivation and cosputter on the structural property of β-FeSi2 for Al-Doped β-FeSi2/ n -Si(100) based solar cells application

ACS Applied Materials and Interfaces

Volumn 5, Issue 12, 2013, Pages 5455-5460

  Dalapati, Goutam Kumar ^a   Kumar, Avishek ^a,b   Tan, Cheng Cheh ^a   Liew, Siao Li ^a   Sonar, Prashant ^c   Seng, Hwee Leng ^c   Hui, Hui Kim ^a   Tripathy, Sudhiranjan ^a   Chi, Dongzhi ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NONE

Author keywords

Al out diffusion; Al passivation; doped FeSi2; photovoltaic; Raman spectroscopy; rapid thermal annealing

Indexed keywords

AL-PASSIVATION; CRYSTALLINE INTERFACES; ELECTRICAL CHARACTERIZATION; OUT-DIFFUSION; PHOTOVOLTAIC; PHOTOVOLTAIC PROPERTY; STRUCTURAL QUALITIES; TRANSMISSION ELECTRON;

AMORPHOUS MATERIALS; AMORPHOUS SILICON; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); OPEN CIRCUIT VOLTAGE; PASSIVATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM;

EID: 84879520946     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400434q     Document Type: Article

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