SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 21, 2013, Pages 7733-7738

Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications

(10) Kumar, A a,b Dalapati, G K b Hidayat, H a Law, F a Tan, H R b Widenborg, P I a Hoex, B a Tan, C C b Chi, D Z b Aberle, A G a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; HIGH-QUALITY INTERFACE; IRON DI SILICIDES; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC CHARACTERISTICS; POLYCRYSTALLINE SILICON FILMS; SOLAR CELL STRUCTURES; THIN-FILM SOLAR CELLS;

ALUMINUM; GLASS; OPEN CIRCUIT VOLTAGE; SILICON SOLAR CELLS;

SILICON;

EID: 84877687770 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra41156g Document Type: Article

Times cited : (15)

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