Photovoltaic characteristics of p-Β -FeSi2 (Al) /n-Si (100) heterojunction solar cells and the effects of interfacial engineering

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Dalapati, G K ^a   Liew, S L ^a   Wong, A S W ^a   Chai, Y ^a   Chiam, S Y ^a   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CONTROL-CELL; DEVICE PERFORMANCE; HETEROJUNCTION SOLAR CELLS; INDIUM TIN OXIDE; IRON DISILICIDE; P-TYPE; PHOTOGENERATED ELECTRONS; PHOTOVOLTAIC CHARACTERISTICS; POLYCRYSTALLINE; SI(1 0 0); THERMAL-ANNEALING;

AMORPHOUS MATERIALS; GERMANIUM; HETEROJUNCTIONS; NITRIDES; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLAR CELLS; TIN;

ALUMINUM;

EID: 78651278317     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536523     Document Type: Article

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