Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Journal of Applied Physics

Volumn 113, Issue 21, 2013, Pages

  Umezu, Ikurou ^a   Warrender, Jeffrey M ^b   Charnvanichborikarn, Supakit ^c   Kohno, Atsushi ^d   Williams, James S ^c   Tabbal, Malek ^e   Papazoglou, Dimitris G ^f,g   Zhang, Xi Cheng ^h,j   Aziz, Michael J ⁱ  

^a KONAN UNIVERSITY   (Japan)

^b U S Army Armaments Research Development Engineering Center Benét Laboratories   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d FUKUOKA UNIVERSITY   (Japan)

^e AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

^f INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^g UNIVERSITY OF CRETE   (Greece)

^h Rensselaer Polytechnic Institute   (United States)

ⁱ HARVARD UNIVERSITY   (United States)

^j UNIVERSITY OF ROCHESTER   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGEN ATOMS; DEEP DONOR; IMPURITY BANDS; IMPURITY CONCENTRATION; LASER MELTING; LOCAL CONFIGURATIONS; MIDINFRARED; THERMAL-ANNEALING;

INFRARED DEVICES; ION IMPLANTATION; LIGHT ABSORPTION; TELLURIUM COMPOUNDS;

OPTICAL MATERIALS;

EID: 84879394014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804935     Document Type: Article

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