Optical conductivity measurements of GaTa4Se8 under high pressure: Evidence of a bandwidth-controlled insulator-to-metal Mott transition

Physical Review Letters

Volumn 110, Issue 3, 2013, Pages

  Ta Phuoc, V ^a   Vaju, C ^b   Corraze, B ^b   Sopracase, R ^c   Perucchi, A ^d   Marini, C ^c   Postorino, P ^c   Chligui, M ^a   Lupi, S ^c   Janod, E ^b   Cario, L ^b  

^a Faculty of Sciences and Techniques   (France)

^b UNIVERSITÉ DE NANTES   (France)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

^d SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO BAND STRUCTURE; AMBIENT PRESSURES; CHARGE GAP; CONDUCTIVITY MEASUREMENTS; DYNAMICAL MEAN-FIELD THEORY; ENERGY SPECTRAL; HIGH PRESSURE; INSULATOR TO METAL; INSULATOR-TO-METAL TRANSITIONS; MIDINFRARED; MOTT INSULATORS; MOTT TRANSITIONS; OPTICAL DATA; OPTICAL GAP; STRONGLY CORRELATED SYSTEMS;

BANDWIDTH; MEAN FIELD THEORY; OPTICAL CONDUCTIVITY; PHASE DIAGRAMS; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 84872331406     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.037401     Document Type: Article

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