Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

Thin Solid Films

Volumn 533, Issue , 2013, Pages 61-65

  Tranchant, J ^a   Janod, E ^a   Cario, L ^a   Corraze, B ^a   Souchier, E ^a   Leclercq, J L ^b   Cremillieu, P ^b   Moreau, P ^a   Besland, M P ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

Chalcogenide; Correlated electron; Lacunar spinel; MIM structure; Mott insulator; Non volatile memory; Resistive switching; Sulfide

Indexed keywords

CORRELATED ELECTRONS; LACUNAR SPINEL; MIM STRUCTURE; MOTT INSULATORS; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; SULFIDE;

CHALCOGENIDES; CHARACTERIZATION; DATA STORAGE EQUIPMENT; ELECTRODES; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC PROPERTIES;

EID: 84879119739     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.104     Document Type: Conference Paper

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