Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Tang, Kun ^a   Gu, Shulin ^a   Ye, Jiandong ^a   Huang, Shimin ^a   Gu, Ran ^a   Zhu, Shunming ^a   Zhang, Rong ^a   Shi, Yi ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO FILMS; BAND GAP RENORMALIZATION EFFECTS; DONOR-BOUND EXCITON; RADIATIVE TRANSITIONS; TEMPERATURE DEPENDENT; TRANSITION ENERGY; ZNO;

ALUMINUM; EXCITONS; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 84879089313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809669     Document Type: Article

References (23)

1. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004). 10.1002/pssb.200301962
2. D. C. Reynolds, D. C. Look, and B. Jogai, J. Appl. Phys. 88, 5760 (2000). 10.1063/1.1320026
3. B. Singh, Z. A. Khan, I. Khan, and S. Ghosh, Appl. Phys. Lett. 97, 241903 (2010). 10.1063/1.3525575
4. H. Morkoç and Ü. Özgür, in Zinc Oxide: Fundamentals, Materials and Device Technology (Wiley, New York, 2009), p. 171.
5. S. S. Lin, H. P. He, Z. Z. Ye, B. H. Zhao, and J. Y. Huang, J. Appl. Phy. 104, 114307 (2008). 10.1063/1.3033560
6. K. Tang, S. L. Gu, J. D. Ye, S. M. Huang, R. Gu, R. Zhang, and Y. D. Zheng, J. Appl. Phys. 112, 103534 (2012). 10.1063/1.4767451
7. Y. Kim, W. Lee, D.-R. Jung, J. Kim, S. Nam, H. Kim, and B. Park, Appl. Phys. Lett. 96, 171902 (2010). 10.1063/1.3419859
8. M. Bazzani, A. Neroni, A. Calzolari, and A. Catellani, Appl. Phys. Lett. 98, 121907 (2011). 10.1063/1.3567513
9. P. Banerjee, W.-J. Lee, K.-R. Bae, S. B. Lee, and G. W. Rubloff, J. Appl. Phys. 108, 043504 (2010). 10.1063/1.3466987
10. H. H.-C. Lai, T. Basheer, V. L. Kuznetsov, R. G. Egdell, R. M. J. Jacobs, M. Pepper, and P. P. Edwards, J. Appl. Phys. 112, 083708 (2012). 10.1063/1.4759208
11. W. F. Yang, Z. Y. Wu, Z. G. Liu, A. S. Pang, Y.-L. Tu, and Z. C. Feng, Thin Solid Films 519, 31 (2010). 10.1016/j.tsf.2010.07.048
12. Z. Yang, D. C. Look, and J. L. Liu, Appl. Phys. Lett. 94, 072101 (2009). 10.1063/1.3080204
13. K. Tang, S. L. Gu, S. Z. Li, J. D. Ye, S. M. Zhu, H. Chen, J. G. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, J. Vac. Sci. Technol. A 29, 03A106 (2011). 10.1116/1.3549136
14. D. C. Look, J. Appl. Phys. 104, 063718 (2008). 10.1063/1.2986143
15. D. C. Look, in Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989), p. 115.
16. J. D. Ye, S. L. Gu, S. M. Zhu, S. M. Liu, Y. D. Zheng, R. Zhang, and Y. Shi, Appl. Phys. Lett. 86, 192111 (2005). 10.1063/1.1928322
17. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, J. Appl. Phys. 101, 083705 (2007). 10.1063/1.2721374
18. D. W. Hamby, D. A. Lucca, J. J. Klopfstein, and G. Cantwell, J. Appl. Phys. 93, 3214 (2003). 10.1063/1.1545157
19. H. Chen, S. L. Gu, J. G. Liu, J. D. Ye, K. Tang, S. M. Zhu, and Y. D. Zheng, Appl. Phys. Lett. 99, 211906 (2011). 10.1063/1.3662964
20. O. Lopatiuk, L. Chernyak, A. Osinsky, J. Q. Xie, and P. P. Chow, Appl. Phys. Lett. 87, 162103 (2005). 10.1063/1.2106001
21. H. P. He, H. P. Tang, Z. Z. Ye, L. P. Zhu, B. H. Zhao, L. Wang, and X. H. Li, Appl. Phys. Lett. 90, 023104 (2007). 10.1063/1.2429906
22. J.-T. Thienprasert, S. Rujirawat, W. Klysubun, J. N. Duenow, T. J. Coutts, S. B. Zhang, D. C. Look, and S. Limpijumnong, Phys. Rev. Lett. 110, 055502 (2013). 10.1103/PhysRevLett.110.055502
23. C. H. Zang, J. F. Su, B. Wang, D. M. Zhang, and Y. S. Zhang, J. Lumin. 131, 1817 (2011). 10.1016/j.jlumin.2011.03.040