Compensation in Al-doped ZnO by Al-related acceptor complexes: Synchrotron X-ray absorption spectroscopy and theory

Physical Review Letters

Volumn 110, Issue 5, 2013, Pages

  T Thienprasert, J ^a,b   Rujirawat, S ^c   Klysubun, W ^d   Duenow, J N ^e   Coutts, T J ^e   Zhang, S B ^f   Look, D C ^g   Limpijumnong, S ^c  

^a KASETSART UNIVERSITY   (Thailand)

^b Thailand Ministry of Science and Technology   (Thailand)

^c SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^d SYNCHROTRON LIGHT RESEARCH INSTITUTE   (Thailand)

^e NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^f RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^g WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR COMPLEX; AL-CONCENTRATION; AL-DOPED ZNO; COMPLEX FORMATIONS; FIRST-PRINCIPLES CALCULATION; GAS RATIO; GROWTH CONDITIONS; SIMULATED SPECTRA; SYNCHROTRON X RAYS; XANES; XANES SPECTRA;

CALCULATIONS; CARRIER CONCENTRATION; X RAY ABSORPTION SPECTROSCOPY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 84873036696     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.055502     Document Type: Article

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