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Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector

(9) Wang, R X a Yang, L C a Zhang, Y M a Xu, S J a,b Fu, K a Zhang, B S a Wang, J F a Xu, K a Yang, H a

a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

b UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; OXIDE MINERALS; PHOTODETECTORS; PHOTONS; URANIUM METALLOGRAPHY; ZINC OXIDE;

DARK CURRENT-VOLTAGE; DEEP ULTRAVIOLET; ELECTRODE MATERIAL; GADOPED ZNO (GZO); NANOCRYSTALLINE ZNO; PHOTOABSORPTIONS; PHOTORESPONSE CHARACTERISTICS; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

VANADIUM METALLOGRAPHY;

EID: 84879073405 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4808381 Document Type: Article

Times cited : (18)

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