Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

Semiconductor Science and Technology

Volumn 23, Issue 10, 2008, Pages

  Zhang, Shuang ^a   Zhao, D G ^a   Jiang, D S ^a   Liu, W B ^a   Duan, L H ^a   Wang, Y T ^a   Zhu, J J ^a   Liu, Z S ^a   Zhang, S M ^a   Yang, Hui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SIGNAL ANALYSIS; SIGNAL PROCESSING;

EQUIVALENT TRANSFORMS; LOAD RESISTANCES; PARALLEL RESISTANCES; RESPONSIVITY; REVERSE BIAS VOLTAGES; SCHOTTKY; SCHOTTKY BARRIERS; TEST CIRCUITS;

BIAS VOLTAGE;

EID: 56349147418     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/10/105015     Document Type: Article

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