Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition

Superlattices and Microstructures

Volumn 39, Issue 1-4, 2006, Pages 282-290

  Sans, J A ^a   Segura, A ^a   Sanchez Royo J F ^a   Barber, V ^a   Hernandez Fenollosa M A ^b   Mari B ^b  

^a Inst de Cie dels Materials   (Spain)

^b UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; THIN FILMS; TRANSPORT PROPERTIES;

C-ORIENTED SAPPHIRE SUBSTRATES; ELECTRON CONCENTRATIONS; OPTICAL ABSORPTION EDGE; PHOTOLUMINESCENCE SPECTRA;

ZINC OXIDE;

EID: 29444439801     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.050     Document Type: Article

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