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Volumn 14, Issue 7, 2011, Pages

Post-humid annealing of low-temperature solution-processed indium based metal oxide TFTs

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC CONDITIONS; CHANNEL LAYERS; CHANNEL MOBILITY; CURRENT RATIOS; INDIUM OXIDE; LOW TEMPERATURES; LOW-COST SOLUTION; METAL OXIDES; PLASTIC SUBSTRATES; POST ANNEALING; PROCESS TEMPERATURE; SOLUTION-PROCESSED; SUBTHRESHOLD;

EID: 79959570999     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3589252     Document Type: Article
Times cited : (28)

References (19)
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  • 2
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    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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  • 12
    • 30644463099 scopus 로고    scopus 로고
    • Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods
    • DOI 10.1021/nl051586w
    • B. Sun and H. Sirringhaus, Nano Lett., 5, 2409 (2005). 10.1021/nl051586w (Pubitemid 43088886)
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    • Sun, B.1    Sirringhaus, H.2
  • 15
    • 30544448919 scopus 로고    scopus 로고
    • Preparation and thermal decomposition of indium hydroxide
    • DOI 10.1007/s10973-005-0963-4
    • T. Sato, J. Therm. Anal. Calorim., 82, 1388 (2005). 10.1007/s10973-005- 0963-4 (Pubitemid 43078540)
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    • Sato, T.1
  • 16
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    • High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
    • DOI 10.1063/1.1843286, 013503
    • H. Q. Chiang, R. L. Hoffman, J. Jeong, D. A. Keszler, and J. F. Wager, Appl. Phys. Lett., 86, 013503 (2005). 10.1063/1.1843286 (Pubitemid 40219489)
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    • Chiang, H.Q.1    Wager, J.F.2    Hoffman, R.L.3    Jeong, J.4    Keszler, D.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.