Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation

Journal of Crystal Growth

Volumn 367, Issue , 2013, Pages 48-52

  Zeng, Xionghui ^a   Han, Baixiang ^a,b   Wang, Xiaodan ^c   Shi, Jianping ^a,b,d   Xu, Yu ^a,e   Zhang, Jicai ^a,e   Wang, Jianfeng ^a,e   Zhang, Jinping ^a   Xu, Ke ^a,e  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^e Suzhou Nanowin Science and Technology Co Ltd   (China)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. Crystal structure; A1. Luminescence; B1. Powders; B2. Semiconducting gallium nitride

Indexed keywords

GALLIUM NITRIDE; GRAIN BOUNDARIES; GROWTH KINETICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LUMINESCENCE; MORPHOLOGY; NITRIDATION; OPTICAL PROPERTIES; POWDER METALS; POWDERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSPORT PROPERTIES; X RAY DIFFRACTION; X RAY POWDER DIFFRACTION; ZINC SULFIDE;

BAND EDGE LUMINESCENCE; CHEMICAL VAPOR TRANSPORT; CRYSTAL MORPHOLOGIES; HYDRIDE VAPOR PHASE EPITAXY; POWDER X RAY DIFFRACTION; SELECTIVE AREA ELECTRON DIFFRACTION; STRUCTURAL AND OPTICAL PROPERTIES; WURTZITE CRYSTAL STRUCTURE;

CRYSTAL STRUCTURE;

EID: 84878574368     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.01.004     Document Type: Article

References (20)

1. I. Akasaki, Journal of Crystal Growth 221 (2000) 231.
2. S. Nozaki, H. Feick, E.R. Weber, M. Micovic, C. Nguyen, Applied Physics Letters 78 (2001) 2896.
3. F.A. Ponce, D.P. Bour, Nature 386 (1997) 351.
4. J. Edmond, A. Abare, M. Bergman, J. Bharathan, K.L. Bunker, D. Emerson, K. Haberern, J. Ibbetson, M. Leung, P. Russel, D. Slater, Journal of Crystal Growth 272 (2004) 242.
5. K. Köhlera, R. Gutta, S. Müllera, J. Wiegerta, H.P. Mennera, L. Kirstea, H. Protzmannb, M. Heuken, Journal of Crystal Growth 321 (2011) 15.
6. A. Tanaka, Y. Funayama, T. Murakami, H. Katsuno, Journal of Crystal Growth 249 (2003) 59.
7. S. Pendurti, Q.-S. Chen, V. Prasad, Journal of Crystal Growth 296 (2006) 150.
8. R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudziński, R. Kudrawiec, J. Serafińczuk, W. Strupiński, Journal of Crystal Growth 312 (2010) 2499.
9. R. Kucharski, M. Rudziński, M. Zaja̧c, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kudrawiec, J. Serafińczuk, W. Strupiński, R. Dwiliński, Applied Physics Letters 95 (2009) 131119.
10. T. Hashimoto, F. Wu, J.S. Speck, S. Nakamura, Nature Materials 6 (2007) 568.
11. C. Sułkowski, A. Chuchmała, A.J. Zaleski, M. Matusiak, J. Mucha, P. Głuchowski, W. Strek, Journal of Solid State Chemistry 183 (2010) 2501.
12. R. Kudrawiec, M. Nyk, A. Podhorodecki, J. Misiewicz, W. Strek, M. Wołcyrz, Applied Physics Letters 88 (2006) 061916.
13. H. Wu, J. Hunting, K. Uheda, L. Lepak, P. Konkapaka, F.J. DiSalvo, M.G. Spencer, Journal of Crystal Growth 279 (2005) 303.
14. H. Tostmann, E. DiMasi, O.G. Shpyrko, P.S. Pershan, B.M. Ocko, M. Deutsch., Physical Review Letters 84 (2000) 4385.
15. H. Wu, C.B. Poitras, M. Lipson, M.G. Spencer, Applied Physics Letters 86 (2005) 191918.
16. C. Xu, J. Chun, B. Chon, T. Joo, D. Kim, Nanotechnology 18 (2007) 015703.
17. J. Song, S. Lee, I. Lee, K. Seol, S. Kannappan, C. Lee, Journal of Crystal Growth 308 (2007) 321.
18. M.A. Reshchikov, H. Morkoc, Journal of Applied Physics 97 (2005) 061301.
19. H. Lee, J.S. Harris Jr., Journal of Crystal Growth 169 (1996) 689.
20. H. Kiyono, T. Sakai, M. Takahashi, S. Shimada, Journal of Crystal Growth 312 (2010) 2823.