GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 59-64

  Tanaka, A ^a   Funayama, Y ^a   Murakami, T ^a   Katsuno, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

A1. Nucleation; A3. Liquid phase epitaxy; B1. Nitrides

Indexed keywords

GALLIUM NITRIDE; NUCLEATION; PRESSURE EFFECTS; SILICON CARBIDE; SURFACE CHEMISTRY; THERMAL EFFECTS; WETTING;

BINARY SYSTEMS;

LIQUID PHASE EPITAXY;

EID: 0037298347     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02097-3     Document Type: Conference Paper

References (7)

1. Karpinski J., Jun J., Porowski S. J. Crystal Growth. 66:1984;1.
2. Karpinski J., Porowski S. J. Crystal Growth. 66:1984;11.
3. Yamane H., Shimada M., Sekiguchi T., DiSalvo F.J. J. Crystal Growth. 186:1998;8.
4. Logan R.A., Thurmond C.D. J. Electrochem. Soc. 119(2):1972;1727.
5. Shibata M., Furuya T., Sakaguchi H., Kuma S. J. Crystal Growth. 196:1999;47.
6. Shibata M., Ooi Y., Furuya T., Sakaguchi H. J. Jpn. Assoc. Crystal Growth. 26:1999;143. (in Japanese).
7. Ogino T., Aoki M. Jpn. J. Appl. Phys. 19(12):1980;2395.