A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Winters, M ^a   Hassan, J ^b   Zirath, H ^a   Janzen E ^b   Rorsman, N ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER VELOCITY; ELECTRON VELOCITY; EPITAXIAL GRAPHENE; EXPECTED VALUES; IMPURITY SCATTERING; OPTICAL PHONON ENERGIES; TEMPERATURE-DEPENDENT MEASUREMENTS; VELOCITY-FIELD CHARACTERISTICS;

ELECTRIC FIELDS; EPITAXIAL GROWTH; SILICON CARBIDE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84878408678     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807162     Document Type: Article

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