Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8679, Issue , 2013, Pages

  Ekinci, Yasin ^a   Vockenhuber, Michaela ^a   Hojeij, Mohamad ^a   Wang, Li ^a   Mojarad, Nassir ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

11 nm HP; 16 nm HP; CAR; Chemically amplified resist; EUVL. Extreme ultraviolet lithography; Inorganic resist; Interference lithography; LER; LWR; Pattern collapse; Photoresist; RLS; Single digit lithography

Indexed keywords

11 NM HP; 16 NM HP; CAR; CHEMICALLY AMPLIFIED RESIST; INORGANIC RESIST; INTERFERENCE LITHOGRAPHY; LER; LWR; PATTERN COLLAPSE; RLS;

ELECTRON BEAM LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; PHOTORESISTS;

NANOLITHOGRAPHY;

EID: 84878378969     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2011533     Document Type: Conference Paper

References (13)

1. Putna, E. S., Younkin, T. R., Leeson, M., Caudillo, R., Bacuita, T., Shah, U. and Chandhok, M., "EUV lithography for 22 nm half pitch and beyond: Exploring resolution, LWR, and sensitivity tradeoffs," Proc. SPIE 7969, 79692K (2011).
2. Anderson, C., Ashworth, D., Baclea-An, L. M., Bhattari, S., Chao, R., Claus R., Denham, P., Goldberg, K., Grenville, A., Jones, G., Miyakawa, R., Murayama, K., Nakagawa, H., Rekawa, S. and Stowers, S., "The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm," Proc. SPIE 8322, 832212 (2012).
3. Ongayi, O., Christianson, M., Meyer, M., Coley, S., Valeri, D., Amy, K., Wagner, M., Cameron, J. and Thackeray, J., "High sensitivity chemically amplified EUV resists through enhanced EUV absorption," Proc. SPIE 8322, 83220T (2012).
4. Ekinci, Y., Vockenhuber, M., Terhalle, B., Hojeij, M., Wang L. and Younkin, T. R., "Evaluation of resist performance with EUV interference lithography for sub-22 nm patterning," Proc. SPIE 8322, 83220W (2012).
5. Gronheid, R., Solak, H. H., Ekinci, Y., Jouve, A. and Van Roey, F., "Characterization of extreme ultraviolet resists with interference lithography," Microelectron. Eng. 67-68, 1103 (2006).
6. Goethals, A. M, Gronheid, R., Van Roey, F., Solak, H. H. and Ekinci, Y., "Progress in EUV resist performance," J. Photopolymer Sci.& Tech. 19, 501 (2006).
7. Solak, H. H., Ekinci, Y., Käser. P. and Park, S., "Photon-beam lithography reaches 12.5 nm half-pitch resolution," J. Vac. Sci. Technol. B 25, 91 (2007).
8. Päivänranta, B., Langner, A., Kirk, E., David, C. and Ekinci, Y., "Sub-10 nm patterning using EUV interference lithography," Nanotechnology 22, 375302 (2011).
9. Stowers, J. K., Telecky, A., Kocsis, M., Clark, B. L., Keszler, D. A., Grenville, A., Anderson, C. N. and Naulleau, P. P., "Directly patterned inorganic hardmask for EUV lithography," Proc. SPIE 7969, 796915 (2010).
10. Ekinci, Y., Solak, H. H., C. Padeste, C., Gobrecht, J., Stoykovich, M. P. and Nealey, P. F., "20 nm Line/Space Patterns in HSQ Fabricated by EUV Interference Lithography," Microelectron. Eng. 84, 700 (2007).
11. Naulleau, P. P., Anderson, C. N., Baclea-an, L-M., Denham, P., George, S., Goldberg, K. A., Jones, G., McClinton, B., Miyakawa, R., Rekawa, S. and Smith, N., "Critical challenges for EUV resist materials," Proc. SPIE 7972, 797202 (2011).
12. Goldfarb, D. L., Bruce, R. L., Bucchignano, J. J., Klaus, D. P., Guillorn, M. A. and Wu, C. J., "Pattern collapse mitigation strategies for EUV lithography," Proc. SPIE 8322, 832205 (2012).
13. Shite, H, Bradon, N., Shimoaoki, T., Kobayashi, S., Nafus, K., Kosugi H., Foubert, P., Hermans J., Hendrickx, E., M. Goethals, M., R. Gronheid, R. and Jehoul, C., "EUV processing investigation on state of the art coater/developer system," Proc. SPIE 7969, 796937 (2011).