In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 3, 2013, Pages

  Hoffbauer, Mark A ^a   Williamson, Todd L ^a   Williams, Joshua J ^a   Fordham, Julia L ^a   Yu, Kin M ^b   Walukiewicz, Wladek ^b   Reichertz, Lothar A ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c RoseStreet Labs Energy   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INDIUM; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

COMPOSITIONAL UNIFORMITY; DEVICE APPLICATION; ELECTRICAL TRANSPORT MEASUREMENTS; ENERGETIC NEUTRAL ATOMS; GROWTH CONDITIONS; LOW TEMPERATURES; REACTION BARRIERS; SILICON SUBSTRATES;

FILM GROWTH;

EID: 84878368342     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4794788     Document Type: Article

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