Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Williamson, T L ^a   Hoffbauer, M A ^a   Yu, K M ^b   Reichertz, L A ^b   Hawkridge, M E ^b   Jones, R E ^b,c   Miller, N ^b,c   Ager, J W ^b   Liliental Weber, Z ^b   Walukiewicz, W ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLIMATED BEAMS; COMPOSITION RANGES; ELECTRON CONCENTRATION; ENERGETIC NEUTRAL ATOMS; FILM QUALITY; GROWTH TECHNOLOGIES; HIGH QUALITY; HIGH SUBSTRATE TEMPERATURE; HIGH-FREQUENCY ELECTRONICS; LOW TEMPERATURE GROWTH; PEAK ENERGY; PHOTOVOLTAICS; REACTION ENERGY; REACTIVE GROUP; SINGLE PHASE; SOLID STATE LIGHTING; SUBSTANTIAL REDUCTION; VISIBLE RANGE; XRD;

ALLOYS; ATOMS; CRYSTALLINE MATERIALS; ECOLOGY; EPITAXIAL GROWTH; LIGHTING; LUMINESCENCE; METALLIC FILMS;

GALLIUM;

EID: 79251607577     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880956     Document Type: Article

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