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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2098-2100

Improvements in the compositional uniformity of In-rich InxGa1-xN films grown at low temperatures by ENABLE

(4) Williamson, Todd L a Salazar, Alicia L a Williams, Joshua J a Hoffbauer, Mark A a

a LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

Growth temperature; InGaN films; Photoluminescence; Photovoltaics

Indexed keywords

BRIGHT BAND; COMPOSITION RANGES; COMPOSITIONAL UNIFORMITY; DEGREE OF CRYSTALLINITY; FILM PROPERTIES; GROWTH SPECIES; GROWTH TECHNIQUES; HIGH QUALITY; INGAN FILMS; LOW TEMPERATURES; OPTIMIZED CONDITIONS; PHOTOVOLTAICS; SUBSTRATE TEMPERATURE; THIN FILM MATERIAL;

GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GROWTH TEMPERATURE; INDIUM; PHOTOLUMINESCENCE;

FILM GROWTH;

EID: 79960737892 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201001168 Document Type: Article

Times cited : (10)

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