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Volumn 5, Issue 11, 2013, Pages 5086-5092
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Copper silicide/silicon nanowire heterostructures: In situ TEM observation of growth behaviors and electron transport properties
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Author keywords
[No Author keywords available]
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Indexed keywords
DIMENSIONAL STACKING;
DYNAMIC DIFFUSION;
ELECTRICAL TRANSPORT PROPERTIES;
FORMATION MECHANISM;
HETEROSTRUCTURE INTERFACES;
IN-SITU TRANSMISSION;
INTERFACE PROPERTY;
NANOWIRE HETEROSTRUCTURES;
COPPER;
ELECTRIC PROPERTIES;
ELECTRON TRANSPORT PROPERTIES;
HETEROJUNCTIONS;
IN SITU PROCESSING;
NANOWIRES;
NUCLEATION;
SILICIDES;
SILICON;
SOLID STATE REACTIONS;
TRANSMISSION ELECTRON MICROSCOPY;
TRANSPORT PROPERTIES;
NANOTECHNOLOGY;
COPPER;
NANOWIRE;
SILICON;
CHEMISTRY;
ELECTRON TRANSPORT;
ELECTRONICS;
TEMPERATURE;
TRANSMISSION ELECTRON MICROSCOPY;
ARTICLE;
COPPER;
ELECTRON TRANSPORT;
ELECTRONICS;
MICROSCOPY, ELECTRON, TRANSMISSION;
NANOWIRES;
SILICON;
TEMPERATURE;
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EID: 84878130524
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c3nr33302g Document Type: Article |
Times cited : (35)
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References (44)
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