메뉴 건너뛰기




Volumn 376, Issue , 2013, Pages 17-22

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

Author keywords

A2. Growth from vapor; A2. Single crystal growth; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire

Indexed keywords

A-PLANE; CRYSTALLINITIES; GROWTH FROM VAPORS; INN LAYERS; METAL-ORGANIC VAPOR PHASE EPITAXY; N-POLAR; NITRIDATION TEMPERATURE; SAPPHIRE SUBSTRATES;

EID: 84878067039     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.04.034     Document Type: Article
Times cited : (6)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.