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Journal of Applied Physics

Volumn 113, Issue 18, 2013, Pages

Bandgap tuning of mono- and bilayer graphene doped with group IV elements

(5) Kaplan, D a Swaminathan, V a Recine, G b,c Balu, R d Karna, S d

a US Army ARDEC (United States)

b POLYTECHNIC UNIVERSITY (United States)

c FORDHAM UNIVERSITY (United States)

d US Army Research Development and Engineering Command (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; BAND-GAP TUNING; BILAYER GRAPHENE; CARRIER EFFECTIVE MASS; DOPING CONCENTRATION; ELECTRIC FIELD STRENGTH; ELECTRONS AND HOLES; TRANSVERSE ELECTRIC FIELD;

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; GERMANIUM; GRAPHENE;

ENERGY GAP;

EID: 84878061396 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4804060 Document Type: Article

Times cited : (33)

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