Tunable bandgap opening in the proposed structure of silicon-doped graphene

Micro and Nano Letters

Volumn 6, Issue 8, 2011, Pages 582-585

  Azadeh, M S Sharif ^a   Kokabi, A ^a   Hosseini, M ^a   Fardmanesh, M ^a  

^a SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; BAND GAP ENGINEERING; BAND STRUCTURE CALCULATION; DENSITY-FUNCTIONAL APPROACH; DENSITY-FUNCTIONAL THEORY CALCULATIONS; ENERGY BAND STRUCTURE; LATTICE GEOMETRY; SILICON CONCENTRATION; SILICON IMPURITY; TUNABLE BAND-GAP; TUNING CAPABILITY; UNIT CELLS; WIDE GAP;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; WAVE FUNCTIONS;

GRAPHENE;

GRAPHENE; NANOMATERIAL; SILICON;

AB INITIO CALCULATION; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRICAL CONDUCTIVITY PARAMETERS; SUBSTITUTION REACTION;

EID: 80052740337     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2011.0195     Document Type: Article

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