Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Park, Hyeongsik ^a   Lee, Jaehyeong ^a   Kim, Heewon ^b   Kim, Doyoung ^c   Raja, Jayapal ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b TES Co Ltd   (South Korea)

^c Ulsan College   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DOPED ZINC OXIDE FILMS; BI-LAYER; EFFICIENCY ENHANCEMENT; FILL FACTOR; FLUORINE DOPED TIN OXIDE; SILICON-BASED THIN FILMS; THIN FILM SOLAR CELLS;

OPEN CIRCUIT VOLTAGE; OPTICAL FILMS; OXIDE FILMS; SILICON CARBIDE; SOLAR CELLS; THIN FILMS; TIN OXIDES;

AMORPHOUS SILICON;

EID: 84877998711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807127     Document Type: Article

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