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Volumn 41-42, Issue , 1996, Pages 519-527
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Growth of a-Si:H on transparent conductive oxides for solar cell applications
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL MODIFICATION;
DEPOSITION;
ELLIPSOMETRY;
GROWTH (MATERIALS);
ION BOMBARDMENT;
OXIDES;
PHASE INTERFACES;
SECONDARY ION MASS SPECTROMETRY;
SOLAR CELLS;
SURFACE TREATMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
DEPTH PROFILING;
DETRIMENTAL EFFECTS;
LIGHT TRAPPING;
TRANSPARENT CONDUCTIVE OXIDE;
AMORPHOUS SILICON;
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EID: 0030172401
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/0927-0248(95)00141-7 Document Type: Article |
Times cited : (22)
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References (16)
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