Chemical activity of oxygen atoms in the magnetron sputter-deposited ZnO films

Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6903-6909

  Morita, Aya ^a   Watanabe, Ikuo ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

Chemical annealing; Layer by layer deposition; Magnetron sputtering; Oxygen atoms; ZnO

Indexed keywords

CHEMICAL ACTIVITIES; CHEMICAL ANNEALING; EXPOSURE CONDITIONS; GROWING SURFACES; INTERSTITIAL DEFECTS; LAYER-BY-LAYER DEPOSITION; LAYER-BY-LAYER TECHNIQUES; OXYGEN ATOM; OXYGEN ATOMS; OXYGEN DIFFUSION; PLASMA EXPOSURE; THERMAL-ANNEALING; ZNO; ZNO FILMS; ZNO LAYERS;

ANNEALING; ATOMS; CRYSTAL DEFECTS; CRYSTALLIZATION; DEPOSITION; METALLIC FILMS; OXYGEN; PLASMA DEPOSITION; SURFACE DEFECTS; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 80051552757     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.11.055     Document Type: Conference Paper

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