Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Thin Solid Films

Volumn 520, Issue 18, 2012, Pages 6007-6011

  Lee, Ji Eun ^a,c   Park, Joo Hyung ^a   Cho, Jun Sik ^a   Chung, Jin Won ^b   Song, Jinsoo ^a   Kim, Donghwan ^c   Lee, Jeong Chul ^a  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b LG Electronics Inc   (South Korea)

^c Korea University   (South Korea)

Author keywords

Aluminum doped zinc oxide; Amorphous silicon; Barrier height; Buffer layer; Fill factor; Fluorine doped tin oxide; Solar cell; Thin films

Indexed keywords

A-SI:H; ALUMINUM-DOPED ZINC OXIDE; AMORPHOUS SILICON THIN FILMS; BARRIER HEIGHTS; CELL CONVERSION EFFICIENCY; CONTACT PROPERTIES; DEVICE PERFORMANCE; DIRECT CALCULATION; ENERGY BARRIER HEIGHT; FILL FACTOR; FLUORINE DOPED TIN OXIDE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE STRUCTURES; INTERFACIAL PROPERTY; P-TYPE; QUANTITATIVE ESTIMATION; SPECIFIC CONTACT RESISTIVITY; SUPERSTRATES; TRANSPARENT CONDUCTING OXIDE;

ALUMINUM; AMORPHOUS SILICON; BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; ENERGY BARRIERS; HYDROGENATION; NANOCOMPOSITES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SOLAR CELLS; THIN FILMS; TIN; TIN OXIDES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SILICON;

EID: 84862226129     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.04.081     Document Type: Article

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