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Volumn 529, Issue , 2013, Pages 50-53

Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

Author keywords

Aluminum doped zinc oxide; Radiofrequency magnetron sputtering; Solar cell; Transparent conductive oxide

Indexed keywords

AL-DOPED ZNO FILMS; ALUMINUM-DOPED ZINC OXIDE; AMORPHOUS SILICON THIN FILMS; ARGON FLOW; AZO THIN FILMS; CURRENT VOLTAGE; EFFECT OF OXYGEN; ELECTRICAL RESISTIVITY; EXTERNAL QUANTUM EFFICIENCY; FLOW RATIOS; HIGH CONDUCTIVITY; IN-VACUUM; MICRO-STRUCTURAL; RADIO FREQUENCY MAGNETRON SPUTTERING; SOLAR CELL DEVICES; SOLAR CELL FABRICATION; TRANSPARENT CONDUCTIVE OXIDE THIN FILM; TRANSPARENT CONDUCTIVE OXIDES;

EID: 84873742521     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.070     Document Type: Conference Paper
Times cited : (8)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.