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Volumn 529, Issue , 2013, Pages 50-53
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Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications
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Author keywords
Aluminum doped zinc oxide; Radiofrequency magnetron sputtering; Solar cell; Transparent conductive oxide
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Indexed keywords
AL-DOPED ZNO FILMS;
ALUMINUM-DOPED ZINC OXIDE;
AMORPHOUS SILICON THIN FILMS;
ARGON FLOW;
AZO THIN FILMS;
CURRENT VOLTAGE;
EFFECT OF OXYGEN;
ELECTRICAL RESISTIVITY;
EXTERNAL QUANTUM EFFICIENCY;
FLOW RATIOS;
HIGH CONDUCTIVITY;
IN-VACUUM;
MICRO-STRUCTURAL;
RADIO FREQUENCY MAGNETRON SPUTTERING;
SOLAR CELL DEVICES;
SOLAR CELL FABRICATION;
TRANSPARENT CONDUCTIVE OXIDE THIN FILM;
TRANSPARENT CONDUCTIVE OXIDES;
ALUMINUM;
ELECTRIC CONDUCTIVITY;
MAGNETRON SPUTTERING;
OPTICAL PROPERTIES;
THIN FILMS;
ZINC OXIDE;
SOLAR CELLS;
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EID: 84873742521
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2012.07.070 Document Type: Conference Paper |
Times cited : (8)
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References (13)
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