Current transport mechanism of heterojunction diodes based on the reduced graphene oxide-based polymer composite and n-type Si

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

  Lin, Jian Huang ^a   Zeng, Jian Jhou ^a   Su, Yu Chao ^a   Lin, Yow Jon ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECT; CURRENT TRANSPORT MECHANISM; DARK CONDUCTIVITY; DOPING MECHANISM; ELECTRON TRAPPING; HETEROJUNCTION DIODES; HOLE TRANSPORTS; IDEALITY FACTORS; PEDOT:PSS; PHOTOCURRENT DECAY; PHOTOCURRENT DENSITY; POLY(4-STYRENESULFONATE); POLY-3 ,4-ETHYLENEDIOXYTHIOPHENE; POLYMER COMPOSITE; RECTIFYING BEHAVIORS; REDUCED GRAPHENE OXIDES;

COMPOSITE FILMS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON;

CONDUCTING POLYMERS;

EID: 84859789583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3703612     Document Type: Article

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