Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates

Thin Solid Films

Volumn 536, Issue , 2013, Pages 240-243

  Zhang, Lei ^a   Ji, Ziwu ^a   Huang, Shulai ^a   Wang, Huining ^a   Xiao, Hongdi ^a   Zheng, Yujun ^a   Xu, Xiangang ^a   Lu, Yun ^b   Guo, Qixin ^c  

^a SHANDONG UNIVERSITY   (China)

^b CHIBA UNIVERSITY   (Japan)

^c SAGA UNIVERSITY   (Japan)

Author keywords

Zinc telluride Gallium arsenide Photoluminescence Strain Metal organic chemical vapor deposition

Indexed keywords

CRYSTALLINE QUALITY; EXCITONIC EMISSION; MEASUREMENT TEMPERATURES; PHOTOLUMINESCENCE PROPERTIES; SPECTRAL CHARACTERISTICS; STRAIN DISTRIBUTIONS; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES;

EPILAYERS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; ZINC COMPOUNDS;

SUBSTRATES;

EID: 84877690740     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.04.040     Document Type: Article

References (24)

1. J.A. Garcia, A. Remón, V. Muñoz, and R. Triboulet J. Cryst. Growth 191 1998 685
2. K. Sato, T. Asahi, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, O. Oda, Y. Yamada, and T. Taguchi Phys. Status Solidi A 180 2000 267
3. Q.X. Guo, M. Matsuse, T. Tanaka, M. Nishio, H. Ogawa, Y. Chang, S. Wang, and J. Wang J. Vac. Sci. Technol. A 19 2001 2232
4. B.A. Wilson, Carl E. Bonner, R.D. Feldman, R.F. Austin, D.W. Kisker, J.J. Krajewski, and P.M. Bridenbaugh J. Appl. Phys. 64 1988 3210
5. K. Wolf, A. Naumov, T. Reisinger, M. Kastner, H. Stanzl, W. Kuhn, and W. Gebhardt J. Cryst. Growth 135 1994 113
6. X.J. Hou, K.L. Teo, M.G. Sreenivasan, T. Liew, and T.C. Chong Thin Solid Films 505 2006 126
7. Y.M. Yu, M.Y. Yoon, and Y.D. Choi Phys. Status Solidi C 3 2006 1070
8. C.M. Rouleau, and D.H. Lowndes Appl. Surf. Sci. 127-129 1998 418
9. H. Dumont, and H. Qu Thin Solid Films 241 1994 370
10. Q.X. Guo, M. Nada, Y.L. Ding, K. Saito, K. Saito, T. Tanaka, and M. Nishio Mater. Res. Bull. 46 2011 551
11. Y. Kume, Q.X. Guo, Y. Fukuhara, T. Tanaka, M. Nishio, and H. Ogawa J. Cryst. Growth 298 2007 445
12. T. Tanaka, K. Hayashida, S. Wang, Q.X. Guo, M. Nishio, and H. Ogawa Nucl. Instr. Meth. Phys. Res. B 199 2003 356
13. P.J. Dean J. Lumin. 21 1979 75
14. Q.X. Guo, Y. Sueyasu, Y.L. Ding, T. Tanaka, and M. Nishio J. Cryst. Growth 311 2009 970
15. A. Naumov, K. Wolf, T. Reisinger, H. Stanzl, H.P. Wagne, and W. Gebhardt Physica B 185 1993 250
16. M. Ekawa, and T. Taguchi Jpn. J. Appl. Phys. 28 1989 L 1341
17. Y. Zhang, B.J. Skromme, and F.S. Turco-Sandroff Phys. Rev. B 46 1992 3872
18. K. Yoshino, M. Yoneta, K. Ohmori, H. Saito, M. Ohishi, and T. Yabe J. Electron. Mater. 33 2004 579
19. H. Veghaus, and P.J. Dean Phys. Rev. B 21 1980 1596
20. S. Nam, Y. Yu, and J. Rhee Mater. Chem. Phys. 69 2001 30
21. T. Tanaka, K. Hayashida, S. Wang, Q.X. Guo, M. Nishio, and H. Ogawa J. Cryst. Growth 248 2003 43
22. Y.M. Yu, S. Nam, and K.S. Lee J. Appl. Phys. 90 2001 807
23. S. Nam, and J. Rhee J. Cryst. Growth 180 1997 47
24. G. Kudlek, N. Presser, J. Gutowski, K. Hingerl, E. Abramot, and H. Sitler Semicond. Sci. Technol. 6 1991 A90