Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 970-973

  Guo, Qixin ^a   Sueyasu, Yusuke ^a   Ding, Yaliu ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; THREE DIMENSIONAL; TRANSITION METAL COMPOUNDS; VAPORS; VEGETATION; ZINC; ZINC COMPOUNDS;

A1. CHARACTERIZATION; A1. CRYSTAL MORPHOLOGY; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS;

SURFACE MORPHOLOGY;

EID: 59749101251     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.118     Document Type: Article

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