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Volumn 19, Issue 5, 2001, Pages 2232-2234
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Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases
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SAGA UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
HYDROGEN;
METHANE;
PLASMAS;
PRESSURE EFFECTS;
PROFILOMETRY;
REACTIVE ION ETCHING;
SURFACE ROUGHNESS;
PLASMA POWER;
STEP STYLUS PROFILOMETERS;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0035441105
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1379802 Document Type: Article |
Times cited : (26)
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References (14)
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