Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2232-2234

  Guo, Q X ^a   Matsuse, M ^a   Tanaka, T ^a   Nishio, M ^a   Ogawa, H ^a   Chang, Y ^a   Wang, J ^a   Wang, S L ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDROGEN; METHANE; PLASMAS; PRESSURE EFFECTS; PROFILOMETRY; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

PLASMA POWER; STEP STYLUS PROFILOMETERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035441105     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1379802     Document Type: Article

References (14)