Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates

Materials Research Bulletin

Volumn 46, Issue 4, 2011, Pages 551-554

  Guo, Qixin ^a   Nada, Masaki ^a   Ding, Yaliu ^a   Saito, Katsuhiko ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A. Semiconductor; B. Epitaxial growth; C. Atomic force microscopy; D. Luminescence

Indexed keywords

A. SEMICONDUCTOR; ATOMIC FORCE; B. EPITAXIAL GROWTH; CRYSTAL QUALITIES; D. LUMINESCENCE; DIMETHYLZINC; EPILAYERS GROWN; GAAS SUBSTRATES; GAS FLOWRATE; GROWTH CHARACTERISTIC; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE MEASUREMENTS; SOURCE MATERIAL; STANDARD CUBIC CENTIMETERS PER MINUTE (SCCM); X RAY ROCKING CURVE;

ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; EPILAYERS; EPITAXIAL GROWTH; FLOW OF GASES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GASES; LUMINESCENCE; MORPHOLOGY; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUPERCONDUCTING FILMS; SURFACES; ZINC COMPOUNDS;

SURFACE MORPHOLOGY;

EID: 79952189157     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2010.12.033     Document Type: Article

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