Annealing effects of a high-quality ZnTe substrate

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 579-582

  Yoshino, Kenji ^a   Yoneta, Minoru ^b   Ohmori, Kenzo ^b   Saito, Hiroshi ^b   Ohishi, Masakazu ^b   Yabe, Takayuki ^c  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

^c MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Annealing; Substrates; ZnTe

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTROOPTICAL DEVICES; EXCITONS; INFRARED IMAGING; LIGHT EMITTING DIODES; OPTICAL DEVICES; PERMITTIVITY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SPECTRUM ANALYSIS; TELLURIUM; TEMPERATURE DISTRIBUTION; VAPOR PRESSURE;

OPTICAL SPECTROSCOPY; OPTICAL TRANSITIONS; POLARITONS; VERTICAL GRADIENT FREEZE (VGF);

ZINC COMPOUNDS;

EID: 3042797375     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0049-2     Document Type: Conference Paper

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