Evaluation of crystal quality of ZnTe/GaAs epilayers by the double crystal rocking curve

Materials Chemistry and Physics

Volumn 69, Issue 1-3, 2001, Pages 30-35

  Nam, Sungun ^a   Yu, Young Moon ^a   Rhee, Jongkwang ^a   O, Byungsung ^a   Choi, Yong Dae ^b   Lee, Jongwon ^c   Jung, Yang June ^d  

^a Chungnam National University   (South Korea)

^b Mokwon University   (South Korea)

^c Daejon National University of Technology   (South Korea)

^d Mokpo National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HEAT TREATMENT; INTERFACES (MATERIALS); LATTICE CONSTANTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; THERMAL EFFECTS; THERMAL EXPANSION;

DOUBLE CRYSTAL ROCKING CURVE; FULL WIDTH AT HALF MAXIMUM (FWHM); HOT WALL EPITAXY; THERMAL EXPANSION COEFFICIENTS; ZINC TELLURIDE;

HETEROJUNCTIONS;

EID: 0035281702     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00293-5     Document Type: Article

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