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Journal of Crystal Growth

Volumn 180, Issue 1, 1997, Pages 47-53

Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

(7) Nam, Sungun a Rhee, Jongkwang a Byungsung, O a Lee, Ki Seon a Choi, Yong Dae b Jeon, Gyung Nam c Lee, Choon Ho c

a Chungnam National University (South Korea)

b Mokwon University (South Korea)

c Chonbuk National University (South Korea)

Author keywords

DCRC; Hot wall epitaxy; Photoluminescence; Pre heating; ZnTe

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; LATTICE CONSTANTS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; THERMAL EFFECTS;

EPILAYERS; HOT WALL EPITAXY;

SEMICONDUCTING FILMS;

EID: 0031236549 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00193-0 Document Type: Article

Times cited : (23)

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