Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 199, Issue , 2003, Pages 356-360

  Tanaka, Tooru ^a   Hayashida, Kazuki ^a   Wang, Shanli ^a   Guo, Qixin ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

Homoepitaxy; Low temperature growth; Photoluminescence; Synchrotron radiation excited growth; ZnTe

Indexed keywords

NITROGEN; PHOTOLUMINESCENCE; SUBSTRATES; SYNCHROTRON RADIATION;

CARRIER GAS;

ZINC COMPOUNDS;

EID: 0037237843     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01562-8     Document Type: Article

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