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Journal of Raman Spectroscopy

Volumn 44, Issue 5, 2013, Pages 758-762

3D Raman mapping of uniaxially loaded 6H-SiC crystals

(5) Del Corro, E a Izquierdo, J G a Gonzalez J b Taravillo, M a Baonza, V G a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b UNIVERSITY OF CANTABRIA (Spain)

Author keywords

3D imaging; moissanite anvil; shear and in plane stresses; silicon carbide; strain distribution

Indexed keywords

SAPPHIRE; SHEAR STRESS; STRESS ANALYSIS;

3D IMAGING; 6H-SILICON CARBIDES; IN-PLANE STRESS; MOISSANITE; MOISSANITE ANVIL; RAMAN MAPPING; SHEAR AND IN-PLANE STRESS; SILICON CARBIDE CRYSTALS; STRAIN DISTRIBUTIONS; THREE-DIMENSIONAL STRESS;

SILICON CARBIDE;

EID: 84877688778 PISSN: 03770486 EISSN: 10974555 Source Type: Journal
DOI: 10.1002/jrs.4252 Document Type: Article

Times cited : (14)

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