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Volumn 3, Issue 1, 2010, Pages

Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SIC

(11) Yamamoto, Minoru a Deki, Manato a Takahashi, Tomonori a Tomita, Takuro a Okada, Tatsuya a Matsuo, Shigeki a Hashimoto, Shuichi a Yamaguchi, Makoto b Nakagawa, Kei c Uehara, Nobutomo c Kamano, Masaru c

a UNIVERSITY OF TOKUSHIMA (Japan)

b HOSEI UNIVERSITY (Japan)

c ANAN NATIONAL COLLEGE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE AND TENSILE STRESS; FEMTOSECONDS; FS LASER; MICRO RAMAN SPECTROSCOPY; NANO-VOIDS; PEAK ENERGY; PHONON MODE; RAMAN SPECTROSCOPIC; SINGLE CRYSTAL SILICON; SPECTRAL WIDTHS; STRAINED LAYERS; STRESS EVALUATIONS; TRANSVERSE OPTICAL PHONONS;

PHONONS; RAMAN SPECTROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

TENSILE STRESS;

EID: 74849137504 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.016603 Document Type: Article

Times cited : (13)

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