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Volumn 110, Issue 9, 2011, Pages

Validating Raman spectroscopic calibrations of phonon deformation potentials in silicon single crystals: A comparison between ball-on-ring and micro-indentation methods

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC EFFECTS; CALIBRATION METHOD; CLOSED-FORM EQUATIONS; CRYSTALLOGRAPHIC PLANE; DEFORMATION POTENTIAL; DEGREE OF PRECISION; ELASTIC COUPLING; EXPERIMENTAL STRESS ANALYSIS; MACROSCOPIC METHODS; MICRO INDENTATION; MICROSCOPIC METHODS; POLARIZED RAMAN SPECTROSCOPY; QUANTITATIVE COMPARISON; RAMAN SPECTROSCOPIC; RESIDUAL STRESS FIELDS; SILICON DEVICES; SILICON LATTICES; SILICON SINGLE CRYSTALS; STRESS FIELD; STRESS PROFILE; STRESS STATE;

EID: 81355136184     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656447     Document Type: Article
Times cited : (17)

References (31)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.